Y. Ohtsuki et al., LASER-INDUCED LONG-LIFETIME ELECTRON-TUNNELING IN BIASED ASYMMETRIC DOUBLE-QUANTUM-WELL, Superlattices and microstructures, 23(2), 1998, pp. 273-282
Laser (cw)-induced tunnelling dynamics of an electronic wavepacket in
a biased asymmetric double quantum well (DWQ) structure is studied num
erically, varying the quantum level alignment in the DQW. The Markoff
master equation is used to determine the time evolution of the wavepac
ket that is initially created by a pump pulse. Laser-induced long-life
time (practically equal to the population relaxation time) electron tu
nnelling is observed when the Rabi frequency is smaller in magnitude t
han the dephasing rate. It is shown that this laser-induced effect can
be eradicated by adjusting the bias voltage to align the upper two el
ectronic states in the narrow and wide wells. (C) 1998 Academic Press
Limited.