SPATIALLY DIRECT RECOMBINATIONS OBSERVED IN MULTIPLE DELTA-DOPED GAAS-LAYERS

Experimental and theoretical studies on n-type multiple delta-doped Ga As layers are reported. Photoluminescence is measured and compared wit h results of self-consistent electronic-structure calculations. A seri es of samples with different donor concentrations in the delta-doped l ayer and a fixed distance between adjacent Si-doped layers (d(s) = 300 Angstrom) were analysed. The PL spectra of the investigated samples d o not show transitions involving confined electronic minibands. Howeve r, the full width at half maximum of the observed main emission band m ay be correlated with the calculated electronic miniband structures. ( C) 1998 Academic Press Limited.