INFRARED-INDUCED EMISSION FROM SILICON QUANTUM WIRES

Authors
BAGRAEV NT CHAIKINA EI KLYACHKIN LE MARKOV II GEHLHOFF W
Citation
Nt. Bagraev et al., INFRARED-INDUCED EMISSION FROM SILICON QUANTUM WIRES, Superlattices and microstructures, 23(2), 1998, pp. 337-344
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
Superlattices and microstructures → ACNP
ISSN journal
07496036
Volume
23
Issue
2
Year of publication
1998
Pages
337 - 344
Database
ISI
SICI code
0749-6036(1998)23:2<337:IEFSQW>2.0.ZU;2-F
Abstract
We present the first findings of a study of infrared-induced emission from silicon quantum wires, which is due to the formation of a correla tion gap in the DOS of the degenerate hole gas. The quantum wires in t his case are created by an electrostatic confining potential inside ul tra-shallow p-n junctions which are realized using controlled surface injection of self-interstitials and vacancies in the process of non-eq uilibrium boron diffusion. (C) 1998 Academic Press Limited.