EFFECT OF INTERFACE ROUGHNESS ON I-V RELATION OF ALGAAS GAAS HETEROJUNCTION FIELD-EFFECT TRANSISTOR/

We have modelled the interface roughness by Al atoms protruding into t he GaAs layer at the AlGaAs/GaAs heterointerface. The I-sd - V-sd rela tion is calculated to study the effect of the interface roughness on t he carrier transport in an AlGaAs/GaAs heterojunction field effect tra nsistor. With ideal conduction, I-sd - V-sd relation is linear. The cu rrent becomes saturated when the Fermi level in the drain drops below the conduction bandedge of the source. Electron waves become scattered by interface roughness and the current is decreased. However, the int erface roughness effect is small due to small size of scattering cente rs. (C) 1998 Academic Press Limited.