THE STRUCTURE, DEVICE PHYSICS, AND MATERIAL PROPERTIES OF THIN-FILM ELECTROLUMINESCENT DISPLAYS

Citation
Pd. Rack et Ph. Holloway, THE STRUCTURE, DEVICE PHYSICS, AND MATERIAL PROPERTIES OF THIN-FILM ELECTROLUMINESCENT DISPLAYS, Materials science & engineering. R, Reports, 21(4), 1998, pp. 171-219
Citations number
100
Categorie Soggetti
Material Science","Physics, Applied
ISSN journal
0927796X
Volume
21
Issue
4
Year of publication
1998
Pages
171 - 219
Database
ISI
SICI code
0927-796X(1998)21:4<171:TSDPAM>2.0.ZU;2-6
Abstract
Thin film electroluminescent (TFEL) displays are complex optoelectroni c devices with challenging material requirements. The multilayer devic e structure includes two electrodes (one metallic and one transparent) , two insulators, and a semiconducting 'phosphor' layer. Each layer ha s unique electronic and optical properties that must be satisfied for device operation. In this article, we review the device structure, the electrical and optical device physics, and the material properties of TFEL displays. Particular attention is given to the phosphor layer pr operties and the radiative recombination phenomenon that is responsibl e for luminescence. The current status of the red, green, blue and whi te TFEL phosphors is also reviewed, and the current and future applica tions are discussed. (C) 1998 Elsevier Science S.A.