MULTILAYER ANALYSIS OF ANISOTROPIC HEAT-FLUX IN VERTICAL CAVITY-SURFACE EMITTING LASERS WITH QUARTER-WAVE SEMICONDUCTING MIRRORS

Citation
Aa. Leal et al., MULTILAYER ANALYSIS OF ANISOTROPIC HEAT-FLUX IN VERTICAL CAVITY-SURFACE EMITTING LASERS WITH QUARTER-WAVE SEMICONDUCTING MIRRORS, IEEE transactions on microwave theory and techniques, 46(3), 1998, pp. 208-214
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
00189480
Volume
46
Issue
3
Year of publication
1998
Pages
208 - 214
Database
ISI
SICI code
0018-9480(1998)46:3<208:MAOAHI>2.0.ZU;2-C
Abstract
Mondlithic arrays of vertical cavity-surface emitting lasers (VCSEL's) have the potential to be used in microwave systems based on opto-elec tronic technologies, However, the temperature has a strong influence o ver several characteristics of VCSEL's, Self heating may restrain the gain inside the device cavity and it is responsible for an increase in the laser threshold current as well as a decrease of its output power , In this paper, the thermal behavior of VCSEL's was evaluated by mean s of a procedure that takes into account-the multilayer aspects of the heat-flux propagation, The method has the advantage of dealing with t he heat propagation inside each layer of the periodic structures of th e device, Thus, the different characteristics and influence of the mat erials employed in the chip manufacturing can be considered and the de vice temperature profile can be predicted, From the method assumptions and simulations, the thermal resistances of typical devices were calc ulated. The results were shown to be in good agreement with experiment al values reported in the literature.