The growth of Tl-2201 films on LaAlO3 single crystal substrates has be
en investigated. The synthesis involved precursor films made by laser
ablation that were treated with Tl2O(g) in near-equilibrium conditions
. By optimising the method of preparation, we obtained films that were
highly smooth, c-axis oriented and epitaxial. The rocking curve of th
e (00<(10)under bar>) reflection had a FWHM of 0.27 degrees. A T-c of
92K was achieved without post-annealing.