EPITAXIAL FILM GROWTH OF TL0.78BI0.22SR1.6BA0.4CA2CU3O9 ON ROLLING ASSISTED BIAXIALLY TEXTURED NICKEL SUBSTRATES WITH YSZ AND CEO2 BUFFER LAYERS

Epitaxial film growth of Tl0.78Bi0.22Sr1.6Ba0.4Ca2Cu3O9 ((Tl,Bi)-1223) on rolling assisted biaxially textured substrates with YSZ and CeO2 b uffer layers (RABiTS) has been successfully demonstrated by laser abla tion and post-deposition annealing in flowing argon. X-ray diffraction (XRD) theta-2 theta spectra showed that the films consisted mainly of c-axis aligned 1223 phase with some intergrown 1212 phase, while XRD phi-scans of (102) pole figure revealed that the films are also a- and b-axes aligned, with an epitaxy of the <100> of (Tl,Bi)-1223 film on the <110> of the top YSZ buffer layer. Four-terminal electrical transp ort measurements showed that the zero-resistance transition temperatur e (T-c) was in the range of 106 - 110 K, and the critical current dens ity (J(c)) at 77 K and zero field was about 10(5) A/cm(2) for the enti re film width (3 mm) of a longer film (14 mm) which was processed diff erently from the shorter films (7 mm). For a shorter film (7 mm) that showed better ab-in-plane alignment, the magnetization J(c), at 77 K a nd extrapolated to zero field, calculated from Bean's model using the full film width (3.5 mm) as the appropriate lateral dimension, was 2 x 10(5) A/cm(2).