MICROSCOPIC THEORY OF LASER GAIN IN SEMICONDUCTOR QUANTUM-WELLS

This article reviews a microscopic theory to compute gain and absorpti on spectra of semiconductor quantum-well structures. The single-partic le energies (band structure) are calculated by using LUttinger-Kohn th eory in the envelope function approximation. The Coulomb-interacting e lectron-hole plasma in the laser gain region is treated at the level o f quantum-kinetic equations in the Markov limit. Examples for results are presented for narrow-and wide-gap III-V and II-VI quantum-well sys tems.