INFLUENCE OF THE KINETIC-ENERGY OF LOCALIZATION ON THE DISTRIBUTION OF ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS

We examine how the kinetic energy of localization associated with the site disorder influences the distribution of electronic states in amor phous semiconductors. Employing an elementary potential well model, in which the disorder characteristic of amorphous semiconductors is repr esented by an ensemble of potential wells, we evaluate the one-electro n density of states function by first determining the binding energy c orresponding to each well, and then averaging over the ensemble of wel ls. We find that the kinetic energy of localization plays an important role in determining both the shape and the magnitude of this one-elec tron density of states function.