E. Skordeva et al., PHOTOINDUCED CHANGES OF MECHANICAL-STRESS IN AMORPHOUS GE-AS-S(SE) FILM SI SUBSTRATE SYSTEMS/, Applied physics A: Materials science & processing, 66(1), 1998, pp. 103-107
Thin amorphous Ge-As-S(Se) films were deposited on Si substrates. Afte
r deposition, a mechanical stress arises in the film due to the differ
ence in lattice parameters. Photo-and thermo-structural changes were i
nduced in the films by band-gap illumination or heat treatment. These
structural changes cause the stress to change its value and/or sign. T
hat is why the stress was used as a tool to investigate the photo-and
thermo-induced changes. The investigation includes also a study of the
compositional dependence of the stress in the chalcogenide film/Si su
bstrate systems. Some infrared spectra have been measured in order to
analyze the possible nature of the induced changes.