MODIFICATION OF SURFACE-PROPERTIES OF PBSE BY ION-IMPLANTATION

P-type PbSe was implanted by phosphorous ion (P+) with incident energy of E-0 = 200 keV and doses of D-s = 1 x 10(14), 5 x 10(14) x 10(15) i ons cm(-2), respectively. R-p, Delta R-p and the depth of the junction which was formed on the surface of the implanted (Pi) PbSe were measu red and compared with theoretical calculation by means of modification of LSS theory. The electrical parameters of the pn junctions in PbSe were also discussed. PbSe photodiode implanted by P+ ion with performa nce was: ideal factor of the diode m = 2.31, diffusion length L = 51.4 mu m, diffusion coefficient D = 26.52 cm(2) s(-1), non-equilibrium mi nority carrier lifetime tau = 9.96 x 10(-7) s. (C) 1998 Elsevier Scien ce Ltd. All rights reserved.