MECHANISMS AND APPLICATIONS OF SELECTIVE-AREA GROWTH BY METALORGANIC MOLECULAR-BEAM EPITAXY (CBE)

`In selective area growth there is a lateral transition from growth to non-growth areas. At this point the growth is determined by the lowes t growing crystal planes. This review summarizes the mechanisms during the facet formation with respect to the growth conditions in metalorg anic molecular beam epitaxy (MOMBE). The effect of interfacet diffusio n and molecular beam flux density at the facets is discussed, Planar s elective area epitaxy (SAE) where the facets can evolve freely is sele cted as starting point. Low lateral growth rates at side wall-(0 (1) o ver bar 1)-planes of the structure are achieved under perpendicular mo lecular beam geometry. The results are transferred to embedded SAE for the lateral coupling of heterostructures having constant material com positions up to the lateral contact. Applications for SAE-grown lasers and laser-waveguide integration are presented.