GROWTH OF ZNSE THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING NITROGEN TRIFLUORIDE

The radical-assisted metalorganic chemical vapor deposition (MOCVD) of ZnSe films on GaAs (100) was performed at 723 K under atmospheric pre ssure by using rf-heated horizontal reactor. Diethylzinc (DEZn) and di ethylselenide (DESe) as source materials were carried by H-2 gas, wher e the [VI]/[II] ratio was kept at 1. Nitrogen trifluoride (NF3) was us ed as co-reactant. With an increase of NF3 flux, the growth rate was d rastically enhanced, which might be due to dealkylation by chain react ions between DESe and NF3. Photuluminescence of the ZnSe films measure d for the films grown with small NF3 flux indicated the donor-acceptor (D-A) pair emission. Tile Hall coefficient measured using Au Ohmic co ntacts indicated the hole concentration in the order of magnitude of 1 0(22) m(-3). The results suggest that the nitrogen atoms from NF3 migh t be incorporated into the grown films as accepters.