GROWTH OF EPITAXIAL MNSB LAYERS ON SI SUBSTRATES BY HOT-WALL EPITAXY

Authors
TATSUOKA H ISAJI K KUWABARA H NAKANISHI Y NAKAMURA T FUJIYASU H
Citation
H. Tatsuoka et al., GROWTH OF EPITAXIAL MNSB LAYERS ON SI SUBSTRATES BY HOT-WALL EPITAXY, Applied surface science, 114, 1997, pp. 48-52
Citations number
10
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
114
Year of publication
1997
Pages
48 - 52
Database
ISI
SICI code
0169-4332(1997)114:<48:GOEMLO>2.0.ZU;2-D
Abstract
MnSb(0001) epitaxial layers were grown on Si(111) substrates by hot-wa ll epitaxy, and the growth condition dependence of the structural prop erties of the layers was examined. The crystalline quality and lattice constants of the layers depend on the growth conditions. TEM observat ion reveals that thin interfacial crystalline layers are generated bet ween the MnSb layer and Si substrate. The MnSb layer obtained here sho ws excellent magnetic property.