PREPARATION OF MANGANESE SILICIDE THIN-FILMS BY SOLID-PHASE REACTION

Authors
WANG JL HIRAI M KUSAKA M IWAMI M
Citation
Jl. Wang et al., PREPARATION OF MANGANESE SILICIDE THIN-FILMS BY SOLID-PHASE REACTION, Applied surface science, 114, 1997, pp. 53-56
Citations number
13
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
114
Year of publication
1997
Pages
53 - 56
Database
ISI
SICI code
0169-4332(1997)114:<53:POMSTB>2.0.ZU;2-B
Abstract
A thin film formation of MnSi and MnSi1.7 on a silicon substrate throu gh solid phase reaction has been studied, where MnSi1.7 is one of the few semiconducting silicides, while MnSi is a metallic one. The growth process and electronic states of manganese silicides with composition of MnSi and MnSi1.7 are investigated by several methods, including so ft X-ray emission spectroscopy.