ALUMINUM NITRIDE THIN-FILMS GROWN BY PLASMA-ASSISTED PULSED-LASER DEPOSITION

Authors
OGAWA T OKAMOTO M MORI Y SASAKI T
Citation
T. Ogawa et al., ALUMINUM NITRIDE THIN-FILMS GROWN BY PLASMA-ASSISTED PULSED-LASER DEPOSITION, Applied surface science, 114, 1997, pp. 57-60
Citations number
17
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
114
Year of publication
1997
Pages
57 - 60
Database
ISI
SICI code
0169-4332(1997)114:<57:ANTGBP>2.0.ZU;2-U
Abstract
Oriented (0002) AlN thin films have been grown on Si(100) substrate by plasma-assisted pulsed laser deposition technique from sintering AlN target. The full width at half maximum (FWHM) value of (0002) X-ray di ffraction peak was 0.60 degrees in the 2 theta/theta scan mode for AlN films grown in nitrogen plasma ambient at 800 degrees C. Cathodolumin escence study revealed the effect of growth environments on optical pr operty of AlN films.