SUBBAND-RESONANCE OSCILLATIONS IN UNDOPED GAAS ALAS TYPE-II SUPERLATTICES UNDER PHOTOEXCITATION/

Authors
MIMURA H HOSODA M OHTANI N GRAHN HT YOKOO K
Citation
H. Mimura et al., SUBBAND-RESONANCE OSCILLATIONS IN UNDOPED GAAS ALAS TYPE-II SUPERLATTICES UNDER PHOTOEXCITATION/, Applied surface science, 114, 1997, pp. 85-89
Citations number
7
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
114
Year of publication
1997
Pages
85 - 89
Database
ISI
SICI code
0169-4332(1997)114:<85:SOIUGA>2.0.ZU;2-B
Abstract
Subband-resonance oscillations have been observed in photoexcited, und oped type-II GaAs-AlAs superlattices. The frequency can be tuned over a wide range either by the applied voltage or the photoexcited carrier density. The oscillations can be explained by an oscillating space-ch arge which forms the domain boundary between two electric-field region s, which are attributed to negative differential velocity originating from X-related resonant tunneling.