GROWTH AND PROPERTIES OF (GA, MN) AS - A NEW III-V DILUTED MAGNETIC SEMICONDUCTOR

Authors
MATSUKURA F OIWA A SHEN A SUGAWARA Y AKIBA N KUROIWA T OHNO H ENDO A KATSUMOTO S IYE Y
Citation
F. Matsukura et al., GROWTH AND PROPERTIES OF (GA, MN) AS - A NEW III-V DILUTED MAGNETIC SEMICONDUCTOR, Applied surface science, 114, 1997, pp. 178-182
Citations number
14
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
114
Year of publication
1997
Pages
178 - 182
Database
ISI
SICI code
0169-4332(1997)114:<178:GAPO(M>2.0.ZU;2-M
Abstract
A new III-V diluted magnetic semiconductor, (Ga, Mn)As, was prepared b y low-temperature molecular beam epitaxy. The lattice constant oi (Ga, Mn)As films determined by X-ray diffraction showed a linear increase with increase of Mn composition, suggesting homogeneous incorporation of Mn in the film. Magnetization measurements revealed ferromagnetic o rder al low temperature, while magnetotransport measurements showed th e anomalous Hall effect and negative magnetoresistance associated with the ferromagnetic order in the (Ga, Mn)As films.