EPITAXY AND PROPERTIES OF INMNAS ALGASB DILUTED MAGNETIC III-V SEMICONDUCTOR HETEROSTRUCTURES/

InMnAs/AlGaSb diluted magnetic semiconductor heterostructures have bee n grown by molecular-beam epitaxy on GaAs substrates. Three epitaxial procedures were employed for the growth of InMnAs, which resulted in t hree-dimensional or two-dimensional nucleation. Low-temperature magnet otransport measurements reveal that while some of the samples show wel l-aligned ferromagnetic ordering some others show ferromagnetic behavi or with no magnetic anisotropy or, in the extreme case, superparamagne tic behavior. The transport properties were correlated to the growth m odes.