EPITAXIAL-GROWTH OF ZIRCONIUM DIOXIDE FILMS ON SAPPHIRE SUBSTRATES

Single-crystalline monoclinic ZrO2 films are grown on sapphire-R subst rates by a molecular beam epitaxy method. which thicknesses ranging fr om 1.6 to 20 nm. Ozone gas is introduced into the chamber during the g rowth so as to oxidize evaporating ZrO or Zr dissociated by electron-b eam bombardment. Reflection high-energy electron diffraction patterns show sharp streaks indicating the grown films have good crystallinitie s and reveal the epitaxial relations between the substrates and the fi lms. In addition, X-ray diffraction and infrared absorption analysis s upport that monoclinic ZrO2 (001) is grown epitaxially on the sapphire -R (1 (1) over bar 02) substrate.