DISTRIBUTION OF DEEP LEVELS IN SI-AU BY SPECTRAL-ANALYSIS OF DEEP-LEVEL TRANSIENT SPECTROSCOPY

Authors
YOSHINO J OKAMOTO Y MORIMOTO J MIYAKAWA T
Citation
J. Yoshino et al., DISTRIBUTION OF DEEP LEVELS IN SI-AU BY SPECTRAL-ANALYSIS OF DEEP-LEVEL TRANSIENT SPECTROSCOPY, Applied physics A: Materials science & processing, 66(3), 1998, pp. 323-325
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics A: Materials science & processing → ACNP
ISSN journal
09478396
Volume
66
Issue
3
Year of publication
1998
Pages
323 - 325
Database
ISI
SICI code
0947-8396(1998)66:3<323:DODLIS>2.0.ZU;2-Y
Abstract
The broadening of the deep levels in a Si:Au sample are studied from t he emission rate spectrum obtained by spectral analysis of deep-level transient spectroscopy. Three deep levels are confirmed in the Si:Au s ystem. One level has the broadened activation energy and the capture c ross-section (Delta E = 1.0 x 10(-1) eV and Delta sigma = 1.4 x 10(-15 ) cm(2)) around their mean values (E-0 = 0.47 eV and sigma(0) = 5.0 x 10(-15) cm(2)). No broadening for the other levels is observed in the emission rate spectrum.