INVESTIGATION OF METAL SIC INTERFACE USING ELECTRON-SPECTROSCOPY AND SCANNING-TUNNELING-MICROSCOPY/

Initial process of Co/OH-SiC(0001) contact has been intended to study using Auger electron spectroscopy (AES) and scanning tunneling microsc opy (STM). Considering that 6H-SiC(0001) has a polar surface i.e. Si o r C terminated face, we first tried to study Co deposition on tither S i(111)7 X 7 or a carbon film. Co silicide like CoSi2 starts to be form ed when Co is deposited on a clean Si surface. AES and extended electr on energy (EELFS) studies have clarified the fact that Co atoms form c lusters when they are deposited on carbon films prepared on Si substra tes, where Co clusters are found to be unreactive with a carbon film. Further it is suggested that the bond length between Co-Co nearest nei ghbors shrinks for small cluster i.e. at the initial stage of the Co a dsorption. co atoms adsorbed on 6H-SiC(0001)6 X 6 reconstructed surfac e are likely to form clusters, which is the case for other reconstruct ed surfaces.