PHOTOEMISSION-STUDY OF VANADIUM DEPOSITION ON SI(100)2X1

Authors
JIKIMOTO T KISAKA M SHIBASAKI T YOSHIMOTO K HIRAI M KUSAKA M IWAMI M
Citation
T. Jikimoto et al., PHOTOEMISSION-STUDY OF VANADIUM DEPOSITION ON SI(100)2X1, Applied surface science, 114, 1997, pp. 384-387
Citations number
4
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
114
Year of publication
1997
Pages
384 - 387
Database
ISI
SICI code
0169-4332(1997)114:<384:POVDOS>2.0.ZU;2-S
Abstract
The process of V/S(100)2 X 1 interface formation has been examined usi ng low energy electron diffraction (LEED) and photoemission spectrosco py (PES) with synchrotron radiation (SR). The results allow us to conc lude that the deposited V atoms interact chemically with Si atoms from the beginning of V deposition on the Si substrate.