DEPTH PROFILING OF OXYGEN-CONTENT OF INDIUM TIN OXIDE FABRICATED BY BIAS SPUTTERING

Authors
HONDA S CHIHARA K WATAMORI M OURA K
Citation
S. Honda et al., DEPTH PROFILING OF OXYGEN-CONTENT OF INDIUM TIN OXIDE FABRICATED BY BIAS SPUTTERING, Applied surface science, 114, 1997, pp. 408-411
Citations number
13
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
114
Year of publication
1997
Pages
408 - 411
Database
ISI
SICI code
0169-4332(1997)114:<408:DPOOOI>2.0.ZU;2-N
Abstract
Depth profiling of oxygen in indium tin oxide (ITO) films, fabricated by a hot cathode Penning discharge sputtering (HC-PDS) on glass substr ates with negative substrate voltage in Ar atmosphere has been investi gated using a high-energy ion beam. The substrate bias voltage was cha nged from -100 to 0 V. The oxygen content in the deposited film change d with substrate bias voltage. it was considered that Ar ion bombardme nt affected the change in oxygen composition. Correlation between oxyg en content and the electrical and optical properties will be discussed .