The surface roughness and stability of S or Se-terminated GaAs(111)B h
as been investigated by reflection high energy electron diffraction (R
HEED), Auger electron spectroscopy (AES) and atomic force microscopy (
AFM). RHEED streak patterns of S-terminated GaAs(111)B surfaces turned
into spot patterns with increasing heating temperature. Se-terminated
surfaces, on the other hand, kept the streak pattern until 500 degree
s C heating. AES measurements showed that the roughness of the S-termi
nated surface increased by 400 degrees C heating, while the Se-termina
ted surface was stable up to 500 degrees C heating. AFM images of both
surfaces showed that the roughness of the S-terminated surface was la
rger than that of the Se-terminated surface. These measurements have r
evealed the difference in thermal stability between the S- and Se-term
inated surfaces.