INASSBP DOUBLE-HETEROSTRUCTURE LASERS FOR THE SPECTRAL RANGE 2.7-3.0 MU-M (T = 77 K)

Authors
DANILOVA TN DANILOVA AP ERSHOV OG IMENKOV AN STEPANOV MV SHERSTNEV VV YAKOVLEV YP
Citation
Tn. Danilova et al., INASSBP DOUBLE-HETEROSTRUCTURE LASERS FOR THE SPECTRAL RANGE 2.7-3.0 MU-M (T = 77 K), Semiconductors, 32(2), 1998, pp. 218-221
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
32
Issue
2
Year of publication
1998
Pages
218 - 221
Database
ISI
SICI code
1063-7826(1998)32:2<218:IDLFTS>2.0.ZU;2-I
Abstract
We have produced, by using liquid-phase epitaxy, 2.7 to 3.0-mu m laser s based on InAsSbP double-heterostructures with different phosphorus c ontents in the active and wide-gap regions. The lasers possess thresho ld current density similar to 0.8 kA/cm(2) at 77 K and operate in the pulsed mode up to similar to 124 K with maximum threshold current dens ity 10-12 kA/cm(2). The lasers have a low series resistance similar to 0.45 Ohm. (C) 1998 American Institute of Physics.