S. Kobayashi et al., OPTICAL AND ELECTRICAL-PROPERTIES OF AMORPHOUS AND MICROCRYSTALLINE GAN FILMS AND THEIR APPLICATION TO TRANSPARENT TFT, Applied surface science, 114, 1997, pp. 480-484
Citations number
12
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Amorphous and microcrystalline GaN thin films have been made by reacti
ve sputtering. The dark conductivity can be changed largely from 10(-1
1) S/cm of amorphous GaN to 10(-3) S/cm of microcrystalline GaN with a
crystalline size of 700 Angstrom. Photoconductivity and persistent ph
otoconductivity (PPC) are observed above room temperature in these fil
ms. And a thin film transistor (TFT) was made by using GaN film and ob
served the operation as a TFT.