ADSORPTION AND DECOMPOSITION OF TRIETHYLPHOSPHINE (TEP) AND TERTIARYBUTYLPHOSPHINE (TBP) ON SI(001) STUDIED BY XPS, HREELS, AND TPD

Authors
KANEDA G MURATA J TAKEUCHI T SUZUKI Y SANADA N FUKUDA Y
Citation
G. Kaneda et al., ADSORPTION AND DECOMPOSITION OF TRIETHYLPHOSPHINE (TEP) AND TERTIARYBUTYLPHOSPHINE (TBP) ON SI(001) STUDIED BY XPS, HREELS, AND TPD, Applied surface science, 114, 1997, pp. 546-550
Citations number
15
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
114
Year of publication
1997
Pages
546 - 550
Database
ISI
SICI code
0169-4332(1997)114:<546:AADOT(>2.0.ZU;2-C
Abstract
Adsorption and decomposition of triethylphosphine (TEP) and tertiarybu tylphosphine (TBP) have been studied using XPS, HREELS, and TPD, TEP i s adsorbed molecularly on the Si(001) surface at RT and some of it is desorbed as a molecule between about 50 and 300 degrees C. The other i s decomposed and C2H4 is evolved between about 150 and 500 degrees C. For TBP, it is suggested to be partially dissociated at RT and C4H8 is evolved between about 70 and 450 degrees C. No carbon left on the sur faces is detected within the detection limit of AES after the TPD meas urement for TEP and TBP. The decomposition mechanisms of TEP and TBP o n the surface are proposed.