THE INVESTIGATION OF PROPERTIES OF SILICON-NITRIDE FILMS OBTAINED BY RPECVD FROM HEXAMETHYLDISILAZANE

The silicon nitride films were obtained by remote plasma enhance chemi cal vapor deposition (RPECVD) using hexamethyldisilazane or its mixtur e with ammonia in the range 373-773 K. The correlations between the ch emical composition, deposition rates, optical, electrical and structur al properties and the growth conditions were established. It was found that the formation of two polycrystalline hexagonal phases SiC and Si 3N4 was realized by using pure hexamethyldisilazane as precursor. The ammonia addition in gas mixture leaded to change of the chemical compo sition and structure of silicon nitride films, namely, the disappearan ce of carbon-bonding and SiC formation, and the order of hexagonal sil icon nitride.