A NEW THEORETICAL-MODEL FOR THE DESCRIPTION OF THE DEGRADATION OF SILICON-NITRIDE FILMS UNDER HIGH-TEMPERATURE ANNEALING

A macroscopic kinetic model of the defect transformation and decomposi tion of he SiNx:H films during high temperature annealing has been con sidered. The set of equations describes the kinetic model taking into account the breaking of (SixNy)=Si:H and (SixNy)=SiN:H bonds, formatio n of dangling bonds, formation of mobile hydrogen atoms and molecules, and formation of nitrogen atoms, diffusion of the mobile species to t he surface and their evolution from the film. Numerical simulation of the equations has allowed to find the redistribution inside SiNx:H fil m of 'free' hydrogen and nitrogen, (SixNy)=Si:H and (SixNy)=SiN:H, and dangling (SixNy)=Si . and (SixNy)=Si-N .. bonds caused by high temper ature treatment as a function of the annealing time. The results of nu merical simulation have been compared with experimental data and quali tatively agree with an earlier proposed model [1] which did not consid er nitrogen evolution from the film.