IDENTIFICATION OF INDUCED REACTION DURING XPS DEPTH PROFILE MEASUREMENTS OF CEO2 SI FILMS GROWN BY ION-BEAM EPITAXY/

Authors
WU Z HUANG D YANG X WANG J QIN F ZHANG J YANG Z
Citation
Z. Wu et al., IDENTIFICATION OF INDUCED REACTION DURING XPS DEPTH PROFILE MEASUREMENTS OF CEO2 SI FILMS GROWN BY ION-BEAM EPITAXY/, Vacuum, 49(2), 1998, pp. 133-137
Citations number
7
Categorie Soggetti
Physics, Applied","Material Science
Journal title
Vacuum → ACNP
ISSN journal
0042207X
Volume
49
Issue
2
Year of publication
1998
Pages
133 - 137
Database
ISI
SICI code
0042-207X(1998)49:2<133:IOIRDX>2.0.ZU;2-4
Abstract
An anomalous behavior was observed in X-ray photoelectron Spectroscopy (XPS) depth profile measurements conducted on CeO2/Si epilayers grown by ion beam epitaxy (IBE): the signals of Ce3+ and Ce4+ co-exist, and the ratio between them increases during the etching time and then ten ds to maintain a constant level before increasing again. The results o f X-ray Diffraction (XRD), Auger Electron Spectroscopy (AES), and Ruth erford Back-Scattering (RES) measurements proved that the reduction ch emical reaction of CeO2 is induced by ion-etching. (C) 1998 Elsevier S cience Ltd. All rights reserved.