THE INFLUENCE OF STRAINED ZNTE ISLANDS ON EXCITONIC RECOMBINATION ANDTHE SELF-ORGANIZING EFFECTS OF ZNTE ISLANDS IN A WIDE CDTE-BASED QUANTUM-WELL

Structures consisting of ZnTe fractional monolayers embedded coherentl y in a CdTe quantum well are investigated by means of optical measurem ents. This study is designed to study the influence of the strained Zn Te islands on excitonic recombination and to explore the dependence of the self-organizing effects of the ZnTe island on growth temperatures . The experimental results show that the strained ZnTe islands can str ongly modify the excitonic transitions related to the quantization of the excitonic centre-of-mass motion (CM quantization). We have shown t hat the striking increase of the effective g-factor of the CM quantize d excitons is due to the change of the hole g-factor involved since it is found experimentally that the electron g-factor is unchanged. The experimental results also show that a coherent distribution of the ZnT e islands is formed at higher growth temperatures (greater than or equ al to 280 degrees C), while a random distribution of the ZnTe islands is formed at lower growth temperatures (=240 degrees C). A coherent al ignment of the islands along the growth direction is concluded.