HIGH-POWER AND LINEARITY PERFORMANCES OF A 4-EMITTER FINGER ALGAAS GAAS HBT IN S-BAND/

Authors
CAZARRE A ANDRIEUX L TASSELLI J CAMPS T MARTY A BAILBE JP
Citation
A. Cazarre et al., HIGH-POWER AND LINEARITY PERFORMANCES OF A 4-EMITTER FINGER ALGAAS GAAS HBT IN S-BAND/, Microwave and optical technology letters, 17(5), 1998, pp. 306-308
Citations number
5
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Microwave and optical technology letters → ACNP
ISSN journal
08952477
Volume
17
Issue
5
Year of publication
1998
Pages
306 - 308
Database
ISI
SICI code
0895-2477(1998)17:5<306:HALPOA>2.0.ZU;2-U
Abstract
An electrothermal model of AlGaAs/GaAs HBT has been validated both for the de and high-power S-band operating mode. The four-emitter finger HBT presented, with an emitter unit area of 6 x 60 mu m(2), exhibits a n output power of about 1 W for a power-added efficiency of 50% at 1.8 GHz with good linearity. (C) 1998 John Wiley & Sons, Inc.