STUDIES ON LOW-LEAKAGE SURFACE-UNDOPED INALAS INGAAS-DOPED CHANNEL HFETS/

Very low, steady tunneling gate leakage of 80 nA/mm at V-gs = 10 V and excess impact ionization gate leakage of 700 nA/mm at V-ds = 2 V have been achieved on InAlAs/InGaAs/InP-doped channel HFETs with an undope d InGaAs cap layer. Double bell-shaped peaks of excess gate leakage ar e observed in these very low-leakage devices, and are reported for the first time. The mechanism for the observation of a subpeak in gate le akage is discussed. (C) 1998 John Wiley & Sons, Inc.