OBSERVATION OF DYNAMIC ANNEALING EFFECTS IN OXIDE SINGLE-CRYSTALS AFTER HIGH-DOSE O-18(-DEGREES-C() IMPLANTATION AT 500)

Dynamic annealing effects and the behavior of oxygen trapping and migr ation in the perovskite oxide single crystals following high dose O-18 (+) implantation at 500 degrees C and at room temperature have been st udied. We report that the cascade collision induced by room-temperatur e in irradiation with O-18 ions (200 keV 5x10(16)/cm(2)) into SrTiO3 s ingle crystal induces an essentially amorphous (chi(min)approximate to 96%) surface layer to a depth of 400 nm. However, irradiation at 500 degrees C results in dynamic annealing effects since ion channeling sh ows chi(min) of 3% in the near surface region. O-18 depth profiles mea sured by the O-18(p, alpha) N-15 nuclear reaction show that high-tempe rature implantation results in a flat-topped O-18 distribution with on ly 48% (compared with room-temperature implantation) of implanted O-18 retained, and more importantly, channeled nuclear reaction analysis s hows that at least 77% of the retained O-18 occupies substitutional si tes. Room-temperature implantation plus post-irradiation annealing at 500 degrees C in flowing oxygen ambient resulted in much less recovery of irradiation damage (chi(min)approximate to 33 to 72%). Similar eff ects were observed in O-18 implanted single crystal LaAlO3.