CONFOCAL RAMAN STRAIN MAPPING OF ISOLATED SINGLE CVD DIAMOND CRYSTALS

PI number of isolated single CVD (chemical vapour deposition) diamond crystals were mapped using confocal Raman microscopy at a spatial reso lution of 1 mu m. Both square and triangular faceted crystals were inc luded. It was found that, in general, regions of both types of crystal s which corresponded to (111) growth sectors showed an overall shift o f the diamond peak to low wavenumber, while the regions which correspo nded to (100) growth sectors showed a shift to high wavenumber. This i s interpreted as deriving from the presence of high concentrations of defects in the (111) growth sectors resulting in an overall tensile st rain in these regions, and a compressive stress where these low densit y regions border the higher quality diamond from (100) growth sectors. (C) 1998 Elsevier Science S.A.