L. Allers et al., THE ANNEALING OF INTERSTITIAL-RELATED OPTICAL-CENTERS IN TYPE-II NATURAL AND CVD DIAMOND, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 228-232
Optical absorption bands in diamond, associated with the carbon inters
titial, show annealing stages at temperatures below that at which the
vacancy becomes mobile. These bands include the 1.86 eV, TR12, R11 and
5RL systems. Although the vacancy is not mobile, the intensity of the
GR1 band, which is due to transitions at the neutral vacancy, does de
crease by about 15-20% during annealing at these relatively low temper
atures (typically 420-540 degrees C). In this paper we show that the 1
.86 eV and R11 systems anneal out completely, concurrently with the ''
rapid'' annealing of the GR1 band, and we attribute the behaviour to t
he migration of the interstitial to the vacancy, followed by mutual an
nihilation. The process follows first-order kinetics, with an activati
on energy of 1.68 +/- 0.15 eV. The intensities of the 1.86 eV and R11
absorption bands are closely correlated during this annealing, and it
is possible that the R11 absorption is produced by transitions to exci
ted states of the 1.86 eV centre. The 5RL and the TR12 absorption band
s increase in intensity, following annealing at 420-540 degrees C, but
their annealing behaviours are not simply related to those of the GR1
and 1.86 eV centres. (C) 1998 Elsevier Science S.A.