Investigation of unpolished, high-quality chemical vapour deposition d
iamond films has revealed a significant concentration of vacancies wit
hin a few microns of the surface, but not in the bulk. Modelling of th
e growth, diffusion and trapping of vacancies shows that this arises f
rom the growth of vacancies into the surface of the diamond and their
subsequent migration and trapping as growth proceeds. Because the temp
erature at which the vacancies migrate is comparable with that of diam
ond growth, a unique situation arises: the lattice defects created dur
ing growth persist in the crystals. (C) 1998 Elsevier Science S.A.