CHARACTERIZATION OF VACANCIES IN AS-GROWN AND IRRADIATED DIAMONDS

Citation
S. Dannefaer et D. Kerr, CHARACTERIZATION OF VACANCIES IN AS-GROWN AND IRRADIATED DIAMONDS, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 339-341
Citations number
6
Categorie Soggetti
Material Science
ISSN journal
09259635
Volume
7
Issue
2-5
Year of publication
1998
Pages
339 - 341
Database
ISI
SICI code
0925-9635(1998)7:2-5<339:COVIAA>2.0.ZU;2-A
Abstract
Three types of diamonds were investigated by means of positron annihil ation and optical absorption: Ib (natural), Ib (synthetic) and IIa (na tural). All of the as-grown samples contained vacancy clusters to whic h no optical absorption has been assigned. In Ib (nat), there was an a dditional contribution from monovacancies most probably in the form of 3N. V complexes. In 2-MeV electron-irradiated IIa diamonds, neutral v acancies were produced, whereas in Ib (syn), they were negatively char ged. Optical measurements corroborate the charge assignment of the mon ovacancies. (C) 1998 Published by Elsevier Science S.A.