Bv. Spitsyn et al., ALN HETEROEPITAXIAL AND ORIENTED FILMS GROWN ON (111), (110) AND (100) NATURAL DIAMOND FACES, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 356-359
CVD growth of AlN thin films on (100), (110) and (111) diamond C-alpha
, substrates was observed, and RHEED and EPMP were used to provide the
evidence of growth of epitaxial (01.1) [11.(3) over bar] AlN//(111) [
(1) over bar 10] C-alpha or oriented wurtzitic AlN on (111) diamond. T
winning in AIN films on (111) C-alpha was found. In the case of the (1
11) substrate, it was shown that in starting from a 0.4 mu m film thic
kness, a conversion of epitaxial growth to a growth texture with a [00
.1] axis normal to substrate takes place. The same textures were obser
ved on both (100) and (110) diamond faces for 0.2-0.3 mu m and greater
film thickness. For an AlN thickness of about 1 mu m, the crystallite
size near outer AlN film surface was 10-20 nm. (C) 1998 Published by
Elsevier Science S.A.