HETEROJUNCTIONS OF AMORPHOUS WIDE-BAND GAP NITRIDES AND SILICON

In situ doped nanocrystalline BN, AlN and GaN films were deposited by means of impulse plasma assisted CVD method on silicon substrates. As a result c-BN(n-type)/Si(p-type) as well as AlN(p-type)/Si(n-type) and GaN(p-type)/Si (n-type) heterojunction structures were formed. On the basis of C-V measurements barrier heights of investigated Si/nitride systems were estimated together with work function values phi of boron and aluminum nitrides. Also a hypothetical energy band diagram for ob tained AlN/Si heterostructures was proposed. (C) 1998 Elsevier Science S.A.