CARRIER TRAPPING AND RELEASE IN CVD-DIAMOND RIMS

Citation
Ce. Nebel et al., CARRIER TRAPPING AND RELEASE IN CVD-DIAMOND RIMS, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 556-559
Citations number
10
Categorie Soggetti
Material Science
ISSN journal
09259635
Volume
7
Issue
2-5
Year of publication
1998
Pages
556 - 559
Database
ISI
SICI code
0925-9635(1998)7:2-5<556:CTARIC>2.0.ZU;2-7
Abstract
Transient photocurrent experiments were performed to investigate trans port and trapping kinetics in highly oriented (HOD) and polycrystallin e (PD) chemical vapour deposition-diamond films perpendicular and para llel to the growth direction. The results indicate better electronic p roperties in PD then in HOD and do not reveal any transport anisotropy in the HOD. Interactions with shallow bulk and grain boundary traps a re detected in both PD and HOD. The main drift length is ca 1-2.6 mu m . Deeply trapped carriers generate a space charge electric field which was measured by d.c.-photoconductivity experiments in the short circu it mode. The relaxation of the space charge field lasts for several mi nutes at T=300 K, The decay is non-exponential and not thermally activ ated in the regime 300-700 K. (C) 1998 Elsevier Science S.A.