FIELD EMITTERS BASED ON SI TIPS WITH ALN COATING

Authors
SPITSYN BV ZHIRNOV VV BLAUTBACHEV AN BORMATOVA LV BELYANIN AF PASHCHENKO PV BOUILOV LL GIVARGIZOV EI
Citation
Bv. Spitsyn et al., FIELD EMITTERS BASED ON SI TIPS WITH ALN COATING, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 692-694
Citations number
9
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
7
Issue
2-5
Year of publication
1998
Pages
692 - 694
Database
ISI
SICI code
0925-9635(1998)7:2-5<692:FEBOST>2.0.ZU;2-O
Abstract
Silicon field emitters were coated with AlN by a reactive magnetron sp uttering technique. The thickness of the coatings varied from 0.5 to 2 mu m. Emission characteristics of AlN coated emitters were measured. The poor reproducibility of emission characteristics for different sam ples prepared at the same conditions may be attributed to the non-repr oducible concentration of impurities, first of all, oxygen in AlN film s. (C) 1998 Elsevier Science S.A.