ELECTRODEPOSITION OF LEAD SELENIDE THIN-FILMS

Citation
H. Saloniemi et al., ELECTRODEPOSITION OF LEAD SELENIDE THIN-FILMS, Journal of materials chemistry, 8(3), 1998, pp. 651-654
Citations number
25
Categorie Soggetti
Chemistry Physical","Material Science
ISSN journal
09599428
Volume
8
Issue
3
Year of publication
1998
Pages
651 - 654
Database
ISI
SICI code
0959-9428(1998)8:3<651:EOLST>2.0.ZU;2-Z
Abstract
PbSe thin films have been electrodeposited potentiostatically from aqu eous solutions containing lead complexed with EDTA (ethylenediaminetet raacetic acid) and SeO2. The effects of deposition parameters such as deposition potential, concentrations of source materials and current d ensity were studied. Cyclic voltammetry was used for studying the film deposition reactions and for finding the appropriate deposition poten tial range. The films were characterized by X-ray diffraction (XRD), e nergy dispersive X-ray spectroscopy (EDX), scanning electron microscop y (SEM), Rutherford backscattering spectrometry (RES), elastic recoil detection analysis (ERDA), deuteron induced reactions and profilometry . Nearly stoichiometric, smooth, mirror-like PbSe films were obtained at deposition potentials between -0.6 and -0.8 V vs. saturated calomel electrode (SCE) when the concentration of lead was ten times higher t han the concentration of selenium, and between -0.4 and -0.75 V vs. SC E when the lead excess was a hundred-fold.