A 3-TERMINAL EDGE-COUPLED INGAAS INP HETEROJUNCTION PHOTOTRANSISTOR FOR MULTIFUNCTION OPERATION/

Authors
MAGNIN V VANDECASTEELE J VILCOT JP HARARI J GOUY JP DECOSTER D
Citation
V. Magnin et al., A 3-TERMINAL EDGE-COUPLED INGAAS INP HETEROJUNCTION PHOTOTRANSISTOR FOR MULTIFUNCTION OPERATION/, Microwave and optical technology letters, 17(6), 1998, pp. 408-412
Citations number
14
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Microwave and optical technology letters → ACNP
ISSN journal
08952477
Volume
17
Issue
6
Year of publication
1998
Pages
408 - 412
Database
ISI
SICI code
0895-2477(1998)17:6<408:A3EIIH>2.0.ZU;2-U
Abstract
A three-terminal edge-coupled InGaAs / InP phototransistor is reported . A dc photocurrent gain near 60 and an optical unity gain frequency o f 40 GHz were measured. The mixing of a modulated optical signal and a microwave signal applied on the base terminal is presented. Optical a nd electrical modeling are used to analyze and improve the device perf ormances. (C) 1998 John Wiley & Sons, Inc.