LATERALLY-RESOLVED STUDY OF THE AU SINX/GAAS(100) INTERFACE/

Authors
ALMEIDA J MARGARITONDO G COLUZZA C DAVY S SPAJER M COURJON D
Citation
J. Almeida et al., LATERALLY-RESOLVED STUDY OF THE AU SINX/GAAS(100) INTERFACE/, Applied surface science, 125(1), 1998, pp. 6-10
Citations number
12
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
125
Issue
1
Year of publication
1998
Pages
6 - 10
Database
ISI
SICI code
0169-4332(1998)125:1<6:LSOTAS>2.0.ZU;2-B
Abstract
We report a microscopic study of the Au/5 Angstrom SiNx/GaAs Schottky barrier based on scanning near-field optical microscopy. Photocurrent yield microimages taken at different photon energies reveal non-topogr aphic features. Taking into account their dependence on photon energy and bias, such features are consistent with lateral variations of the local density of states related to defects. The results, therefore, co nfirm that lateral variations must be considered when analyzing semico nductor interfaces and of the corresponding devices. (C) 1998 Elsevier Science B.V.