PROCESSING AND INTEGRATION OF COPPER INTERCONNECTS

Authors
JACKSON RL BROADBENT E CACOURIS T HARRUS A BIBERGER M PATTON E WALSH T
Citation
Rl. Jackson et al., PROCESSING AND INTEGRATION OF COPPER INTERCONNECTS, Solid state technology, 41(3), 1998, pp. 49
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid state technology → ACNP
ISSN journal
0038111X
Volume
41
Issue
3
Year of publication
1998
Database
ISI
SICI code
0038-111X(1998)41:3<49:PAIOCI>2.0.ZU;2-H
Abstract
The conversion from aluminum to copper interconnects introduces many n ew processes and materials into semiconductor manufacturing, including damascene process Rows and electroplating unit processes. Chemical va por deposition (CVD) for complete copper fill may return to replace el ectroplating in Mure device generations. Many integration problems inv olve the thin-films that function as diffusion barriers and seed/wetti ng layers.