SINGLE-WAFER PROCESSING OF IN SITU-DOPED POLYCRYSTALLINE SI AND SI1-XGEX

This article demonstrates the industrial feasibility of single-wafer C VD for key advanced BiCMOS (less than or equal to 0.35 mu m) and CMOS (less than or equal to 0.18 mu m) processing steps. In situ As-doped a morphous silicon layers improve electrical performance in BICMOS devic es with a reduced number of process steps. We demonstrate reproducible stacked layers of poly-Si1-xGex/Si with Ge contents ranging from 0-10 0% and test the electrical behavior of this new gate material in 0.18- mu m CMOS devices.