INVESTIGATION OF CHARGE-CARRIER MOBILITY AT LOW-TEMPERATURES IN NEUTRON TRANSMUTATION DOPED GAAS IRRADIATED WITH ELECTRONS

Authors
KORSHUNOV FP KURILOVICH NF PROKHORENKO TA
Citation
Fp. Korshunov et al., INVESTIGATION OF CHARGE-CARRIER MOBILITY AT LOW-TEMPERATURES IN NEUTRON TRANSMUTATION DOPED GAAS IRRADIATED WITH ELECTRONS, Doklady Akademii nauk BSSR, 41(6), 1997, pp. 54-58
Citations number
10
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Doklady Akademii nauk BSSR → ACNP
ISSN journal
0002354X
Volume
41
Issue
6
Year of publication
1997
Pages
54 - 58
Database
ISI
SICI code
0002-354X(1997)41:6<54:IOCMAL>2.0.ZU;2-G
Abstract
Nonmonotone decrease in change carrier mobility measured at low temper ature (T = 77 - 200 K) with dose rise in neutron transmutation doped G aAs irradiated at T = 300 K with fast electrons (E = 4 MeV) was shown to be caused by charge state alteration of some dominant defect in cha nging Fermi level location In the forbidden gap under electron irradia tion of the crystal. The value of the given defect level made up E-D = E-C - 0,11 eV.